| PART |
Description |
Maker |
| NESG2030M04-T2 NESG2030M04 |
NONLINEAR MODEL
NPN SiGe HIGH FREQUENCY TRANSISTOR
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
NEC[NEC]
NEC, Corp.
|
| NESG3031M14-T3-A NESG3031M14 NESG3031M14-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2101M05-T1-A NESG2101M05 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HA31005ANP HA31005ANPTL-E |
SiGe MMIC High Frequency Power Amplifier
|
Renesas Electronics Corporation
|
| HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| AT45DB321C-CC AT45DB321C-RI AT45DB321C-CI AT45DB32 |
32 MEGABIT 2.7 VOLT DATAFLASH
TRANSI, NPN, 160V, 600MA, 2W, SOT223, CZT5551
DIODE/SM,REC*1A*60V 32M X 1 FLASH 2.7V PROM, PDSO28
|
Atmel Corp.
Atmel, Corp.
|
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| NESG204619 NESG204619-T1-A NESG204619-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| 2SC945 2SC94509 2SC945L-X-T92-K 2SC945L-X-T92-B 2S |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
